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rev. 1.5 9/13 copyright ? 2013 by silicon laboratori es SI8460/61/62/63 not recommended f o r n e w d e si g n s SI8460/61/62/63 l ow p ower s ix -c hannel d igital i solator features applications safety regulatory approvals description silicon lab's family of ultra-low-power digi tal isolators are cmos devices offering substantial data rate, propagation delay, power, size, reliability, and external bom adv antages when compared to legacy isolation technologies. the operat ing parameters of these products remain stable across wide temper ature ranges throughout their service life. for ease of design, only vdd bypass capacitors are required. data rates up to 150 mbps are supported, and all devices achieve worst-case propagation delays of less than 10 ns. all products are safety certified by ul, csa, and vde and support withstand voltages of up to 2.5 kvrms. these devices are available in a 16-pin narrow- body soic package. ? high-speed operation ?? dc to 150 mbps ? no start-up init ialization required ? wide operating supply voltage: 2.70?5.5 v ? wide operating supply voltage: 2.70?5.5v ? ultra low power (typical) 5 v operation: ?? < 1.6 ma per channel at 1 mbps ?? < 6 ma per channel at 100 mbps 2.70 v operation: ?? < 1.4 ma per channel at 1 mbps ?? < 4 ma per channel at 100 mbps ? high electromagnetic immunity ? up to 2500 v rms isolation ? 60-year life at rated working voltage ? precise timing (typical) ?? <10 ns worst case ?? 1.5 ns pulse width distortion ?? 0.5 ns channel-channel skew ?? 2 ns propagation delay skew ?? 6 ns minimum pulse width ? transient immunity 25 kv/s ? wide temperature range ?? ?40 to 125 c at 150 mbps ? rohs-compliant packages ?? soic-16 narrow body ? industrial automation systems ? hybrid electric vehicles ? isolated switch mode supplies ? isolated adc, dac ? motor control ? power inverters ? communications systems ? ul 1577 recognized ?? up to 2500 v rms for 1 minute ? csa component notice 5a approval ?? iec 60950-1, 61010-1 (reinforced insulation ) ? vde certification conformity ?? iec 60747-5-2 (vde0884 part 2) ordering information: see page 29.
SI8460/61/62/63 2 rev. 1.5 not recommended f o r n e w d e si g n s
SI8460/61/62/63 rev. 1.5 3 not recommended f o r n e w d e si g n s t able of c ontents section page 1. electrical specificat ions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 2. functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 2.1. theory of operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 2.2. eye diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 2.3. device operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 2.4. layout recommendations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 2.5. typical performance char acteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 3. errata and design migration guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 3.1. power supply bypass capacit ors (revision a and revision b) . . . . . . . . . . . . . . . . 27 3.2. latch up immunity (rev ision a only) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 4. pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 5. ordering guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 6. package outline: 16-pi n narrow body soic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 7. land pattern: 16-pin narrow body soic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 8. top marking: 16-pin na rrow body soic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 8.1. 16-pin narrow body soic top marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 8.2. top marking explanation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .34 document change list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 contact information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .36
SI8460/61/62/63 4 rev. 1.5 not recommended f o r n e w d e si g n s 1. electrical specifications table 1. recommended operating conditions parameter symbol test condition min typ max unit ambient operating temperature* t a 150 mbps, 15 pf, 5 v ?40 25 125 c supply voltage v dd1 2.70 ? 5.5 v v dd2 2.70 ? 5.5 v *note: the maximum ambient temperature is dependent on data fr equency, output loading, num ber of operating channels, and supply voltage. table 2. absolute maximum ratings 1 parameter symbol min typ max unit storage temperature 2 t stg ?65 ? 150 c ambient temperature under bias t a ?40 ? 125 c supply voltage (revision a) 3 v dd1 , v dd2 ?0.5 ? 5.75 v supply voltage (revision b) 3 v dd1 , v dd2 ?0.5 ? 6.0 v input voltage v i ?0.5 ? v dd + 0.5 v output voltage v o ?0.5 ? v dd + 0.5 v output current drive channel i o ??10ma lead solder temperature (10 s) ? ? 260 c maximum isolation voltage (1 s) ? ? 3600 v rms notes: 1. permanent device damage may occur if the absolute maximum ratings are exceeded. functional operation should be restricted to conditions as specified in the operational sections of this data sheet. 2. vde certifies storage temper ature from ?40 to 150 c. 3. see "5. ordering guide" on page 29 for more information.
SI8460/61/62/63 rev. 1.5 5 not recommended f o r n e w d e si g n s table 3. electrical characteristics (v dd1 =5v10%, v dd2 =5v10%, t a = ?40 to 125 c; applies to narrow-body soic package) parameter symbol test condition min typ max unit high level input voltage v ih 2.0 ? ? v low level input voltage v il ??0 . 8v high level output voltage v oh loh = ?4 ma v dd1 ,v dd2 ?0.4 4.8 ? v low level output voltage v ol lol = 4 ma ? 0.2 0.4 v input leakage current i l ?? 1 0 a output impedance 1 z o ?8 5? ? dc supply current (all inputs 0 v or at supply) SI8460ax, bx v dd1 v dd2 v dd1 v dd2 all inputs 0 dc all inputs 0 dc all inputs 1 dc all inputs 1 dc ? ? ? ? 1.7 3.3 7.7 3.5 2.6 5.0 11.6 5.3 ma si8461ax, bx v dd1 v dd2 v dd1 v dd2 all inputs 0 dc all inputs 0 dc all inputs 1 dc all inputs 1 dc ? ? ? ? 2.1 3.4 7.1 4.5 3.2 5.1 10.7 6.8 ma si8462ax, bx v dd1 v dd2 v dd1 v dd2 all inputs 0 dc all inputs 0 dc all inputs 1 dc all inputs 1 dc ? ? ? ? 2.5 3.0 6.5 5.0 3.8 4.5 9.8 8.3 ma si8463ax, bx v dd1 v dd2 v dd1 v dd2 all inputs 0 dc all inputs 0 dc all inputs 1 dc all inputs 1 dc ? ? ? ? 2.8 2.8 6.0 6.0 4.2 4.2 9.0 9.0 ma notes: 1. the nominal output impedance of an isolat or driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series termination resistor and channe l resistance of the output driver fet. when driving loads where transmission line effects will be a factor, output pi ns should be appropriately terminated with controlled impedance pcb traces. 2. t psk(p-p) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, lo ad, and ambient temperature. 3. start-up time is the time period from the applic ation of power to valid data at the output.
SI8460/61/62/63 6 rev. 1.5 not recommended f o r n e w d e si g n s 1 mbps supply current (all inputs = 500 khz square wave, ci = 15 pf on all outputs) SI8460ax, bx v dd1 v dd2 ? ? 4.7 4.0 7.1 6.0 ma si8461ax, bx v dd1 v dd2 ? ? 4.7 4.5 7.1 6.8 ma si8462ax, bx v dd1 v dd2 ? ? 4.7 4.3 7.1 6.5 ma si8463ax, bx v dd1 v dd2 ? ? 4.7 4.7 7.1 7.1 ma 10 mbps supply current (all inputs = 5 mhz square wave, ci = 15 pf on all outputs) SI8460bx v dd1 v dd2 ? ? 4.7 5.5 7.1 7.7 ma si8461bx v dd1 v dd2 ? ? 5.0 5.7 7.2 8 ma si8462bx v dd1 v dd2 ? ? 5.2 5.4 7.3 7.6 ma si8463bx v dd1 v dd2 ? ? 5.5 5.5 7.7 7.7 ma table 3. electrical characteristics (continued) (v dd1 =5v10%, v dd2 =5v10%, t a = ?40 to 125 c; applies to narrow-body soic package) parameter symbol test condition min typ max unit notes: 1. the nominal output impedance of an isolat or driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series termination resistor and channe l resistance of the output driver fet. when driving loads where transmission line effects will be a factor, output pi ns should be appropriately terminated with controlled impedance pcb traces. 2. t psk(p-p) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, lo ad, and ambient temperature. 3. start-up time is the time period from the applic ation of power to valid data at the output.
SI8460/61/62/63 rev. 1.5 7 not recommended f o r n e w d e si g n s 100 mbps supply current (all inputs = 50 mhz square wave, ci = 15 pf on all outputs) SI8460bx v dd1 v dd2 ? ? 5.0 28.8 7.5 36 ma si8461bx v dd1 v dd2 ? ? 9.0 25 11.3 30 ma si8462bx v dd1 v dd2 ? ? 13.3 20.8 16.6 26 ma si8463bx v dd1 v dd2 ? ? 17.2 17.2 21.5 21.5 ma timing charac teristics si846xax maximum data rate 0 ? 1.0 mbps minimum pulse width ? ? 250 ns propagation delay t phl , t plh see figure 1 ? ? 35 ns pulse width distortion |t plh - t phl | pwd see figure 1 ? ? 25 ns propagation delay skew 2 t psk(p-p) ? ? 40 ns channel-channel skew t psk ? ? 35 ns si846xbx maximum data rate 0 ? 150 mbps minimum pulse width ? ? 6.0 ns propagation delay t phl , t plh see figure 1 3.0 6.0 9.5 ns pulse width distortion |t plh - t phl | pwd see figure 1 ? 1.5 2.5 ns propagation delay skew 2 t psk(p-p) ?2 . 03 . 0n s channel-channel skew t psk ?0 . 51 . 8n s table 3. electrical characteristics (continued) (v dd1 =5v10%, v dd2 =5v10%, t a = ?40 to 125 c; applies to narrow-body soic package) parameter symbol test condition min typ max unit notes: 1. the nominal output impedance of an isolat or driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series termination resistor and channe l resistance of the output driver fet. when driving loads where transmission line effects will be a factor, output pi ns should be appropriately terminated with controlled impedance pcb traces. 2. t psk(p-p) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, lo ad, and ambient temperature. 3. start-up time is the time period from the applic ation of power to valid data at the output.
SI8460/61/62/63 8 rev. 1.5 not recommended f o r n e w d e si g n s figure 1. propagation delay timing all models output rise time t r c l =15pf see figure 1 ?3.85.0ns output fall time t f c l =15pf see figure 1 ?2.83.7ns common mode transient immunity cmti v i =v dd or 0 v ? 25 ? kv/s start-up time 3 t su ?1 54 0 s table 3. electrical characteristics (continued) (v dd1 =5v10%, v dd2 =5v10%, t a = ?40 to 125 c; applies to narrow-body soic package) parameter symbol test condition min typ max unit notes: 1. the nominal output impedance of an isolat or driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series termination resistor and channe l resistance of the output driver fet. when driving loads where transmission line effects will be a factor, output pi ns should be appropriately terminated with controlled impedance pcb traces. 2. t psk(p-p) is the magnitude of the difference in propagation delay times measured between different units operating at the same supply voltages, lo ad, and ambient temperature. 3. start-up time is the time period from the applic ation of power to valid data at the output. typical input t plh t phl typical output t r t f 90% 10% 90% 10% 1.4 v 1.4 v
SI8460/61/62/63 rev. 1.5 9 not recommended f o r n e w d e si g n s table 4. electrical characteristics (v dd1 = 3.3 v10%, v dd2 = 3.3 v10%, t a = ?40 to 125 c; applies to narrow-body soic package) parameter symbol test condition min typ max unit high level input voltage v ih 2.0 ? ? v low level input voltage v il ??0 . 8v high level output voltage v oh loh = ?4 ma v dd1 ,v dd2 ?0.4 3.1 ? v low level output voltage v ol lol = 4 ma ? 0.2 0.4 v input leakage current i l ?? 1 0 a output impedance 1 z o ?8 5? ? dc supply current (all inputs 0 v or at supply) SI8460ax, bx v dd1 v dd2 v dd1 v dd2 all inputs 0 dc all inputs 0 dc all inputs 1 dc all inputs 1 dc ? ? ? ? 1.7 3.3 7.7 3.5 2.6 5.0 11.6 5.3 ma si8461ax, bx v dd1 v dd2 v dd1 v dd2 all inputs 0 dc all inputs 0 dc all inputs 1 dc all inputs 1 dc ? ? ? ? 2.1 3.4 7.1 4.5 3.2 5.1 10.7 6.8 ma si8462ax, bx v dd1 v dd2 v dd1 v dd2 all inputs 0 dc all inputs 0 dc all inputs 1 dc all inputs 1 dc ? ? ? ? 2.5 3.0 6.5 5.0 3.8 4.5 9.8 8.3 ma si8463ax, bx v dd1 v dd2 v dd1 v dd2 all inputs 0 dc all inputs 0 dc all inputs 1 dc all inputs 1 dc ? ? ? ? 2.8 2.8 6.0 6.0 4.2 4.2 9.0 9.0 ma notes: 1. the nominal output impedance of an isol ator driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driv er fet. when driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance pcb traces. 2. t psk(p-p) is the magnitude of the difference in propagation de lay times measured between different units operating at the same supply voltages, l oad, and ambient temperature. 3. start-up time is the time period from the a pplication of power to valid data at the output.
SI8460/61/62/63 10 rev. 1.5 not recommended f o r n e w d e si g n s 1 mbps supply current (all inputs = 500 khz square wave, ci = 15 pf on all outputs) SI8460ax, bx v dd1 v dd2 ? ? 4.7 4.0 7.1 6.0 ma si8461ax, bx v dd1 v dd2 ? ? 4.7 4.5 7.1 6.8 ma si8462ax, bx v dd1 v dd2 ? ? 4.7 4.3 7.1 6.5 ma si8463ax, bx v dd1 v dd2 ? ? 4.7 4.7 7.1 7.1 ma 10 mbps supply current (all inputs = 5 mhz square wave, ci = 15 pf on all outputs) SI8460bx v dd1 v dd2 ? ? 4.7 5.5 7.1 7.7 ma si8461bx v dd1 v dd2 ? ? 5.0 5.7 7.2 8.0 ma si8462bx v dd1 v dd2 ? ? 5.2 5.4 7.3 7.6 ma si8463bx v dd1 v dd2 ? ? 5.5 5.5 7.7 7.7 ma table 4. electrical characteristics (continued) (v dd1 = 3.3 v10%, v dd2 = 3.3 v10%, t a = ?40 to 125 c; applies to narrow-body soic package) parameter symbol test condition min typ max unit notes: 1. the nominal output impedance of an isol ator driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driv er fet. when driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance pcb traces. 2. t psk(p-p) is the magnitude of the difference in propagation de lay times measured between different units operating at the same supply voltages, l oad, and ambient temperature. 3. start-up time is the time period from the a pplication of power to valid data at the output.
SI8460/61/62/63 rev. 1.5 11 not recommended f o r n e w d e si g n s 100 mbps supply current (all inputs = 50 mhz square wave, ci = 15 pf on all outputs) SI8460bx v dd1 v dd2 ? ? 4.8 20 7.2 25 ma si8461bx v dd1 v dd2 ? ? 7.4 17.7 9.3 22.1 ma si8462bx v dd1 v dd2 ? ? 10.2 15 12.8 18.8 ma si8463bx v dd1 v dd2 ? ? 12.7 12.7 15.9 15.9 ma timing characteristics si846xax maximum data rate 0 ? 1.0 mbps minimum pulse width ? ? 250 ns propagation delay t phl ,t plh see figure 1 ? ? 35 ns pulse width distortion |t plh - t phl | pwd see figure 1 ? ? 25 ns propagation delay skew 2 t psk(p-p) ? ? 40 ns channel-channel skew t psk ? ? 35 ns si846xbx maximum data rate 0 ? 150 mbps minimum pulse width ? ? 6.0 ns propagation delay t phl , t plh see figure 1 3.0 6.0 9.5 ns pulse width distortion |t plh - t phl | pwd see figure 1 ? 1.5 2.5 ns propagation delay skew 2 t psk(p-p) ?2 . 03 . 0n s channel-channel skew t psk ?0 . 51 . 8n s table 4. electrical characteristics (continued) (v dd1 = 3.3 v10%, v dd2 = 3.3 v10%, t a = ?40 to 125 c; applies to narrow-body soic package) parameter symbol test condition min typ max unit notes: 1. the nominal output impedance of an isol ator driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driv er fet. when driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance pcb traces. 2. t psk(p-p) is the magnitude of the difference in propagation de lay times measured between different units operating at the same supply voltages, l oad, and ambient temperature. 3. start-up time is the time period from the a pplication of power to valid data at the output.
SI8460/61/62/63 12 rev. 1.5 not recommended f o r n e w d e si g n s all models output rise time t r c l =15pf see figure 1 ?4.36.1ns output fall time t f c l =15pf see figure 1 ?3.04.3ns common mode transient immunity cmti v i =v dd or 0 v ? 25 ? kv/s start-up time 3 t su ?1 54 0 s table 4. electrical characteristics (continued) (v dd1 = 3.3 v10%, v dd2 = 3.3 v10%, t a = ?40 to 125 c; applies to narrow-body soic package) parameter symbol test condition min typ max unit notes: 1. the nominal output impedance of an isol ator driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driv er fet. when driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance pcb traces. 2. t psk(p-p) is the magnitude of the difference in propagation de lay times measured between different units operating at the same supply voltages, l oad, and ambient temperature. 3. start-up time is the time period from the a pplication of power to valid data at the output.
SI8460/61/62/63 rev. 1.5 13 not recommended f o r n e w d e si g n s table 5. electrical characteristics 1 (v dd1 = 2.70 v, v dd2 = 2.70 v, t a = ?40 to 125 c; applies to narrow-body soic package) parameter symbol test condition min typ max unit high level input voltage v ih 2.0 ? ? v low level input voltage v il ??0 . 8v high level output voltage v oh loh = ?4 ma v dd1 ,v dd2 ?0.4 2.3 ? v low level output voltage v ol lol = 4 ma ? 0.2 0.4 v input leakage current i l ?? 1 0 a output impedance 2 z o ?8 5? ? dc supply current (all inputs 0 v or at supply) SI8460ax, bx v dd1 v dd2 v dd1 v dd2 all inputs 0 dc all inputs 0 dc all inputs 1 dc all inputs 1 dc ? ? ? ? 1.7 3.3 7.7 3.5 2.6 5.0 11.6 5.3 ma si8461ax, bx v dd1 v dd2 v dd1 v dd2 all inputs 0 dc all inputs 0 dc all inputs 1 dc all inputs 1 dc ? ? ? ? 2.1 3.4 7.1 4.5 3.2 5.1 10.7 6.8 ma si8462ax, bx v dd1 v dd2 v dd1 v dd2 all inputs 0 dc all inputs 0 dc all inputs 1 dc all inputs 1 dc ? ? ? ? 2.5 3.0 6.5 5.0 3.8 4.5 9.8 8.3 ma si8463ax, bx v dd1 v dd2 v dd1 v dd2 all inputs 0 dc all inputs 0 dc all inputs 1 dc all inputs 1 dc ? ? ? ? 2.8 2.8 6.0 6.0 4.2 4.2 9.0 9.0 ma notes: 1. specifications in this table are also valid at vdd1 = 2.6 v and vdd2 = 2.6 v when the operating temperature range is constrained to t a = 0 to 85 c. 2. the nominal output impedance of an isolat or driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver fet. when driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance pcb traces. 3. t psk(p-p) is the magnitude of the difference in propagation del ay times measured between different units operating at the same supply voltages, load, and ambient temperature. 4. start-up time is the time period from the a pplication of power to valid data at the output.
SI8460/61/62/63 14 rev. 1.5 not recommended f o r n e w d e si g n s 1 mbps supply current (all inputs = 500 khz square wave, ci = 15 pf on all outputs) SI8460ax, bx v dd1 v dd2 ? ? 4.7 4.0 7.1 6.0 ma si8461ax, bx v dd1 v dd2 ? ? 4.7 4.5 7.1 6.8 ma si8462ax, bx v dd1 v dd2 ? ? 4.7 4.3 7.1 6.5 ma si8463ax, bx v dd1 v dd2 ? ? 4.7 4.7 7.1 7.1 ma 10 mbps supply current (all inputs = 5 mhz square wave, ci = 15 pf on all outputs) SI8460bx v dd1 v dd2 ? ? 4.7 5.5 7.1 7.7 ma si8461bx v dd1 v dd2 ? ? 5.0 5.7 7.2 8.0 ma si8462bx v dd1 v dd2 ? ? 5.2 5.4 7.3 7.6 ma si8463bx v dd1 v dd2 ? ? 5.5 5.5 7.7 7.7 ma table 5. electrical characteristics 1 (continued) (v dd1 = 2.70 v, v dd2 = 2.70 v, t a = ?40 to 125 c; applies to narrow-body soic package) parameter symbol test condition min typ max unit notes: 1. specifications in this table are also valid at vdd1 = 2.6 v and vdd2 = 2.6 v when the operating temperature range is constrained to t a = 0 to 85 c. 2. the nominal output impedance of an isolat or driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver fet. when driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance pcb traces. 3. t psk(p-p) is the magnitude of the difference in propagation del ay times measured between different units operating at the same supply voltages, load, and ambient temperature. 4. start-up time is the time period from the a pplication of power to valid data at the output.
SI8460/61/62/63 rev. 1.5 15 not recommended f o r n e w d e si g n s 100 mbps supply current (all inputs = 50 mhz square wave, ci = 15 pf on all outputs) SI8460bx v dd1 v dd2 ? ? 4.8 15.8 7.2 19.8 ma si8461bx v dd1 v dd2 ? ? 6.7 14.2 8.4 17.8 ma si8462bx v dd1 v dd2 ? ? 8.7 12.2 10.9 15.3 ma si8463bx v dd1 v dd2 ? ? 10.5 10.5 13.1 13.1 ma timing characteristics si846xax maximum data rate 0 ? 1.0 mbps minimum pulse width ? ? 250 ns propagation delay t phl ,t plh see figure 1 ? ? 35 ns pulse width distortion |t plh - t phl | pwd see figure 1 ? ? 25 ns propagation delay skew 3 t psk(p-p) ? ? 40 ns channel-channel skew t psk ? ? 35 ns si846xbx maximum data rate 0 ? 150 mbps minimum pulse width ? ? 6.0 ns propagation delay t phl , t plh see figure 1 3.0 6.0 9.5 ns pulse width distortion |t plh - t phl | pwd see figure 1 ? 1.5 2.5 ns propagation delay skew 3 t psk(p-p) ?2 . 03 . 0n s channel-channel skew t psk ?0 . 51 . 8n s table 5. electrical characteristics 1 (continued) (v dd1 = 2.70 v, v dd2 = 2.70 v, t a = ?40 to 125 c; applies to narrow-body soic package) parameter symbol test condition min typ max unit notes: 1. specifications in this table are also valid at vdd1 = 2.6 v and vdd2 = 2.6 v when the operating temperature range is constrained to t a = 0 to 85 c. 2. the nominal output impedance of an isolat or driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver fet. when driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance pcb traces. 3. t psk(p-p) is the magnitude of the difference in propagation del ay times measured between different units operating at the same supply voltages, load, and ambient temperature. 4. start-up time is the time period from the a pplication of power to valid data at the output.
SI8460/61/62/63 16 rev. 1.5 not recommended f o r n e w d e si g n s all models output rise time t r c l =15pf see figure 1 ?4.86.5ns output fall time t f c l =15pf see figure 1 ?3.24.6ns common mode transient immunity cmti v i =v dd or 0 v ? 25 ? kv/s start-up time 4 t su ?1 54 0 s table 6. regulatory information* csa the si84xx is certified under csa component acceptan ce notice 5a. for more details, see file 232873. 61010-1: up to 300 v rms reinforced insulation working voltage; up to 600 v rms basic insulation working voltage. 60950-1: up to 130 v rms reinforced insulation working voltage; up to 600 v rms basic insulation working voltage. vde the si84xx is certified according to iec 60747-5-2. for more details, see file 5006301-4880-0001. 60747-5-2: up to 560 v peak for basic insulation working voltage. ul the si84xx is certified under ul1577 component recognition program. for more details, see file e257455. rated up to 2500 v rms isolation voltage for basic insulation. *note: regulatory certifications apply to 2.5 kv rms rated devices which are production tested to 3.0 kv rms for 1 sec. for more information, see "5. ordering guide" on page 29. table 5. electrical characteristics 1 (continued) (v dd1 = 2.70 v, v dd2 = 2.70 v, t a = ?40 to 125 c; applies to narrow-body soic package) parameter symbol test condition min typ max unit notes: 1. specifications in this table are also valid at vdd1 = 2.6 v and vdd2 = 2.6 v when the operating temperature range is constrained to t a = 0 to 85 c. 2. the nominal output impedance of an isolat or driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series termination resistor and channel resistance of the output driver fet. when driving loads where transmission line effects will be a factor, output pins should be appropriately terminated with controlled impedance pcb traces. 3. t psk(p-p) is the magnitude of the difference in propagation del ay times measured between different units operating at the same supply voltages, load, and ambient temperature. 4. start-up time is the time period from the a pplication of power to valid data at the output.
SI8460/61/62/63 rev. 1.5 17 not recommended f o r n e w d e si g n s table 7. insulation and safety-related specifications parameter symbol test condition value unit nb soic-16 nominal air gap (clearance) 1 l(io1) 3.9 min mm nominal external tracking (creepage) 1 l(io2) 3.9 min mm minimum internal gap (internal clearance) 0.008 mm tracking resistance (proof tracking index) pti iec60112 600 v rms erosion depth ed 0.019 mm resistance (input-output) 2 r io 10 12 ? capacitance (input-output) 2 c io f=1mhz 2.0 pf input capacitance 3 c i 4.0 pf notes: 1. the values in this table correspond to the nominal creepage and clearance values as detailed in ?6. package outline: 16-pin narrow body soic?. vd e certifies the clearance and creepage limits as 4.7 mm minimum for the nb soic-16 package. ul does not impose a clearance and creepage mini mum for component level certifications. csa certifies the clearance and creepage limits as 3.9 mm minimum for the nb soic-16 package. 2. to determine resistance and capacitance, the si84xx is converted into a 2-terminal device. pins 1?8 are shorted together to form the first terminal and pi ns 9?16 are shorted together to form th e second terminal. the parameters are then measured between these two terminals. 3. measured from input pin to ground. table 8. iec 60664-1 (vde 0844 part 2) ratings parameter test condition specification basic isolation group material group i installation classification rated mains voltages < 150 v rms i-iv rated mains voltages < 300 v rms i-iii rated mains voltages < 400 v rms i-ii rated mains voltages < 600 v rms i-ii
SI8460/61/62/63 18 rev. 1.5 not recommended f o r n e w d e si g n s table 9. iec 60747-5-2 insulation characteristics for si84xxxb* parameter symbol test cond ition characteristic unit maximum working insulation voltage v iorm 560 v peak input to output test voltage v pr method b1 (v iorm x 1.875 = v pr , 100% production test, t m =1 sec, partial discharge < 5 pc) 1050 v peak transient overvoltage v iotm t = 60 sec 4000 v peak pollution degree (din vde 0110, table 1) 2 insulation resistance at t s , v io =500v r s >10 9 ? *note: maintenance of the safety data is ensu red by protective circuits. the si84xx provides a climate classification of 40/125/21. table 10. iec safety limiting values 1 parameter symbol test condition min typ max unit nb soic-16 case temperature t s ? ? 150 c safety input, output, or supply current i s ? ja = 105 c/w (nb soic-16), v i =5.5v, t j =150c, t a =25c ? ? 215 ma device power dissipation 2 p d ? ? 415 mw notes: 1. maximum value allowed in the event of a failure; also see the thermal derating curve in figure 2. 2. the si846x is tested with vdd1 = vdd2 = 5.5 v, tj = 150 oc , cl = 15 pf, input a 150 mbp s 50% duty cycle square wave.
SI8460/61/62/63 rev. 1.5 19 not recommended f o r n e w d e si g n s figure 2. (nb soic-16) thermal derating curve, dependence of safety limiting values with case temperature per din en 60747-5-2 table 11. thermal characteristics parameter symbol test condition min typ max unit nb soic-16 ic junction-to-air thermal resistance ? ja ?105 ?c/w 02 0 0 150 100 50 500 400 200 100 0 temperature (oc) safety-limiting current (ma) 430 300 360 215 v dd1 , v dd2 = 2.70 v v dd1 , v dd2 = 3.6 v v dd1 , v dd2 = 5.5 v
SI8460/61/62/63 20 rev. 1.5 not recommended f o r n e w d e si g n s 2. functional description 2.1. theory of operation the operation of an si846x channel is analogous to that of an opto coupler, except an rf carrier is modulated instead of light. this simple archit ecture provides a robust isolated data path and requires no special considerations or initialization at start-up. a simplified block diagram for a single si846x channel is shown in figure 3. figure 3. simplified channel diagram a channel consists of an rf transmitter and rf receiver separated by a semiconductor-based isolation barrier. referring to the transmitter, input a modulates the carrier provided by an rf oscillator using on/off keying. the receiver contains a demodulator that decodes the input state according to its rf energy content and applies the result to output b via the output driv er. this rf on/off keying scheme is superior to pulse code schemes as it provides best-in-class noise immunity, low power consum ption, and better immunity to magnetic fields. see figure 4 for more details. figure 4. modulation scheme rf oscillator modulator demodulator a b semiconductor- based isolation barrier transmitter receiver input signal output signal modulation signal
SI8460/61/62/63 rev. 1.5 21 not recommended f o r n e w d e si g n s 2.2. eye diagram figure 5 illustrates an eye-diagram take n on an SI8460. for the data source, the test used an anritsu (mp1763c) pulse pattern generator set to 1000 ns/div. the output of the generator's clock and data from an SI8460 were captured on an oscillosc ope. the results illustra te that data integrity was mainta ined even at the high data rate of 150 mbps. the results also show that 2 ns pulse wid th distortion and 250 ps peak jitter were exhibited. figure 5. eye diagram
SI8460/61/62/63 22 rev. 1.5 not recommended f o r n e w d e si g n s 2.3. device operation device behavior during startup, normal operation, and shutdown is shown in table 12. table 12. si846x logic operation table v i input 1,2 vddi state 1,3,4 vddo state 1,3,4 v o output 1,2 comments hp p h normal operation. lp p l x 5 up p l upon transition of vddi from unpowered to powered, v o returns to the sa me state as v i in less than 1 s. x 5 p up undetermined upon transition of vddo from unpowered to powered, v o returns to the sa me state as v i within 1 s. notes: 1. vddi and vddo are the input and output power supplies. v i and v o are the respective input and output terminals. 2. x = not applicable; h = logic high; l = logic low; hi-z = high impedance. 3. ?powered? state (p) is defined as 2.70 v < vdd < 5.5 v. 4. ?unpowered? state (up) is defined as vdd = 0 v. 5. note that an i/o can power the die for a given side through an internal diode if its source has adequate current.
SI8460/61/62/63 rev. 1.5 23 not recommended f o r n e w d e si g n s 2.4. layout recommendations to ensure safety in the end us er application, high voltage circ uits (i.e., circuits with >30 v ac ) must be physically separated from the safety extra-low voltage circuits (selv is a circuit with <30 v ac ) by a certain distance (creepage/clearance). if a component, su ch as a digital isolator, straddles this isolation barrier, it must meet those creepage/clearance requirements and also provide a sufficiently large high-voltage breakdown protection rating (commonly referred to as working voltage protection). table 6 on page 16 and table 7 on page 17 detail the working voltage and creepage/clearan ce capabilities of the si84xx. thes e tables also detail the component standards (ul1577, iec60747, csa 5a), which are readily accepted by certif ication bodies to provide proof for end-system specifications requirements. refer to the end-system specification (61010-1, 60950-1, etc.) requirements before starting any design that uses a digital isolator. the following sections detail the recommended bypass an d decoupling components necessary to ensure robust overall performance and relia bility for systems using the si84xx digital isolators. 2.4.1. supply bypass digital integrated circuit components typically require 0. 1 f (100 nf) bypass capacitors when used in electrically quiet environments. however, digital isolators are commo nly used in hazardous envi ronments with excessively noisy power supplies. to counteract these harsh conditions, it is recommended that an additional 1 f bypass capacitor be added between vdd and gnd on both sides of the package. the capacitors should be placed as close as possible to the package to minimize stray inductance. if the system is excessively noisy, it is recommended that the designer add 50 to 100 ? resistors in series with the vdd supply voltage source and 50 to 300 ? resistors in series with the digital inputs/outputs (see figure 6). for more details, see "3. errata and design migration guidelines" on page 27. all components upstream or downstream of the isolator should be properly decoupled as well. if these components are not properly decoupled, their supply noise can couple to the isolator inputs and outputs, potentially causing damage if spikes exceed the maximum ratings of th e isolator (6 v). in this case, the 50 to 300 ? resistors protect the isolator's inputs/outputs (note that permanent device damage may occur if the absolute maximum ratings are exceeded). functional operation shou ld be restricted to the conditions specified in table 1, ?recommended operating conditions,? on page 4. 2.4.2. pin connections no connect pins are not internally connecte d. they can be left floating, tied to v dd , or tied to gnd. 2.4.3. output pin termination the nominal output impedance of an isolat or driver channel is approximately 85 ? , 40%, which is a combination of the value of the on-chip series term ination resistor and channel resistance of the output driver fet. when driving loads where transmission line effects will be a factor, output pins should be appr opriately terminated with controlled impedance pcb traces. the series term ination resistor values should be scaled appropriately while keeping in mind the recommendations described in ?2.4.1. supply bypass? above. figure 6. recommended bypass components for the si84xx digital isolator family vdd1 vdd2 gnd1 gnd2 50 ? 300 ? 50 ? 300 ? input/output input/output c2 c3 1 ? f 1 ? f r1 (50 ? 100 ? ) v source 1 a1 b1 50 ? 300 ? 50 ? 300 ? ax bx c1 r2 (50 ? 100 ? ) v source 2 c4 0.1 ? f 0.1 ? f
SI8460/61/62/63 24 rev. 1.5 not recommended f o r n e w d e si g n s 2.5. typical perfor mance characteristics the typical performance characteristics de picted in the following diagrams are for information purposes only. refer to tables 3, 4, and 5 for actual specification limits. figure 7. SI8460 typical v dd1 supply current vs. data rate 5, 3.3, and 2.70 v operation figure 8. si8461 typical v dd1 supply current vs. data rate 5, 3.3, and 2.70 v operation (15 pf load) figure 9. si8462 typical v dd1 supply current vs. data rate 5, 3.3, and 2.70 v operation (15 pf load) figure 10. SI8460 typical v dd2 supply current vs. data rate 5, 3.3, and 2.70 v operation (15 pf load) figure 11. si8461 typical v dd2 supply current vs. data rate 5, 3.3, and 2.70 v operation (15 pf load) figure 12. si8462 typical v dd2 supply current vs. data rate 5, 3.3, and 2.70 v operation (15 pf load) 0 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 data rate (mbps) current (ma) 5v 3.3v 2.70v 0 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 data rate (mbps) current (ma) 5v 3.3v 2.70v 0 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 data rate (mbps) current (ma) 5v 3.3v 2.70v 0 5 10 15 20 25 30 35 40 45 0 102030405060708090100110120130140150 data rate (mbps) current (ma) 5v 3.3v 2.70v 0 5 10 15 20 25 30 35 40 45 0 102030405060708090100110120130140150 data rate (mbps) current (ma) 5v 2.70v 3.3v 0 5 10 15 20 25 30 35 40 45 0 102030405060708090100110120130140150 data rate (mbps) current (ma) 5v 3.3v 2.70v
SI8460/61/62/63 rev. 1.5 25 not recommended f o r n e w d e si g n s figure 13. si8463 typical v dd1 or v dd2 supply current vs. data rate 5, 3.3, and 2.70 v operation (15 pf load) figure 14. propagation delay vs. temperature 0 5 10 15 20 25 30 35 40 45 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 data rate (mbps) current (ma) 5v 3.3v 2.70v 5 6 7 8 9 10 -40 -20 0 20 40 60 80 100 120 temperature (degrees c) delay (ns) rising edge falling edge
SI8460/61/62/63 26 rev. 1.5 not recommended f o r n e w d e si g n s figure 15. si84xx time-dependent dielectric breakdown
SI8460/61/62/63 rev. 1.5 27 not recommended f o r n e w d e si g n s 3. errata and design migration guidelines when using the new si846x products, or when migrating from silicon labs ' legacy isolators, designers must consider and adhere to the following requirements. 3.1. power supply bypass capaci tors (revision a and revision b) when using the si846x isolators with power supplies > 4.5 v, sufficient vdd bypass capacitors must be present on both the vdd1 and vdd2 pins to ensure the vdd rise time is less than 0.5 v/s (which is > 9 s for a > 4.5 v supply). although rise time is power supply dependent, > 1 f capacitors are required on both power supply pins (vdd1, vdd2) of the isolator device. 3.1.1. resolution for recommendations on resolving this issue, see "2.4.1 . supply bypass" on page 23. additionally, refer to "5. ordering guide" on page 29 for current ordering information. 3.2. latch up imm unity (revision a only) latch up immunity generally exceeds 200 ma per pin. exceptions: certain pins pr ovide < 100 ma of latch-up immunity. to increase latch-up immunity on these pins, 100 ? of equivalent resistance must be included in series with all of the pins listed in table 13. the 100 ? equivalent resistance can be comprised of the source driver's output resistance and a series termination resistor. 3.2.1. resolution this issue has been corrected with re vision b of the device. refer to "5. ordering guide" on page 29 for more information. table 13. affected ordering part numbers (revision a only) affected ordering part numbers* device revision pin# name pin type SI8460sv-a-is/is1, si8461sv-a-is/is1, si8462sv-a-is/is1, si8463sv-a-is/is1 a 2 a1 input 6 a5 input or output 10 b6 input or output 14 b2 output *note: sv = speed grade/isolation ra ting (aa, ab, ba, bb).
SI8460/61/62/63 28 rev. 1.5 not recommended f o r n e w d e si g n s 4. pin descriptions name soic-16 pin# type description v dd1 1 supply side 1 power supply. a1 2 digital input side 1 digital input. a2 3 digital input side 1 digital input. a3 4 digital input side 1 digital input. a4 5 digital i/o side 1 digital input or output. a5 6 digital i/o side 1 digital input or output. a6 7 digital i/o side 1 digital input or output. gnd1 8 ground side 1 ground. gnd2 9 ground side 2 ground. b6 10 digital i/o side 2 digital input or output. b5 11 digital i/o side 2 digital input or output. b4 12 digital i/o side 2 digital input or output. b3 13 digital output side 2 digital output. b2 14 digital output side 2 digital output. b1 15 digital output side 2 digital output. v dd2 16 supply side 2 power supply. v dd1 a1 a3 a4 gnd1 a2 v dd2 b2 b1 b4 b3 gnd2 i s o l a t i o n rf xmitr rf rcvr rf xmitr rf rcvr rf xmitr rf rcvr rf xmitr rf rcvr SI8460 a5 rf xmitr rf rcvr b5 b6 a6 rf xmitr rf rcvr v dd1 a1 a3 a4 gnd1 a2 v dd2 b2 b1 b4 b3 gnd2 i s o l a t i o n rf xmitr rf rcvr rf xmitr rf rcvr rf xmitr rf rcvr si8461 rf xmitr rf rcvr a5 b5 rf xmitr rf rcvr b6 a6 rf xmitr rf rcvr v dd1 a1 a3 a4 gnd1 a2 v dd2 b2 b1 b4 b3 gnd2 i s o l a t i o n rf xmitr rf rcvr rf xmitr rf rcvr rf rcvr rf xmitr rf rcvr rf xmitr rf rcvr si8462 rf xmitr rf rcvr a5 b5 b6 a6 rf xmitr rf rcvr v dd1 a1 a3 a4 gnd1 a2 v dd2 b2 b1 b4 b3 gnd2 i s o l a t i o n rf xmitr rf rcvr rf xmitr rf rcvr rf rcvr rf xmitr rf rcvr rf xmitr rf rcvr si8463 rf xmitr rf rcvr a5 b5 b6 a6 rf xmitr rf rcvr
SI8460/61/62/63 rev. 1.5 29 not recommended f o r n e w d e si g n s 5. ordering guide these devices are not recommended for new designs. please see the si866x data sheet for replacement options. table 14. ordering guide for valid opns 1 ordering part number (opn) alternative part number (apn) number of inputs vdd1 side number of inputs vdd2 side maximum data rate (mbps) isolation rating package type revision b devices 2 SI8460aa-b-is1 si8660ba-b-is1 6 0 1 1 kvrms nb soic-16 SI8460ba-b-is1 si8660ba-b-is1 6 0 150 si8461aa-b-is1 si8661ab-b-is1 5 1 1 si8461ba-b-is1 si8661bb-b-is1 5 1 150 si8462aa-b-is1 si8662ab-b-is1 4 2 1 si8462ba-b-is1 si8662bb-b-is1 4 2 150 si8463aa-b-is1 si8663ab-b-is1 3 3 1 si8463ba-b-is1 si8663bb-b-is1 3 3 150 SI8460ab-b-is1 si8660ab-b-is1 6 0 1 2.5 kvrms nb soic-16 SI8460bb-b-is1 si8660bb-b-is1 6 0 150 si8461ab-b-is1 si8661ab-b-is1 5 1 1 si8461bb-b-is1 si8661bb-b-is1 5 1 150 si8462ab-b-is1 si8662ab-b-is1 4 2 1 si8462bb-b-is1 si8662bb-b-is1 4 2 150 si8463ab-b-is1 si8663ab-b-is1 3 3 1 si8463bb-b-is1 si8663bb-b-is1 3 3 150 notes: 1. all packages are rohs-compliant. moisture sensitivity level is msl2a with peak reflow temperature of 260 c according to the jedec industry standard classifica tions and peak solder temperature. 2. revision a and revision b devices are supported for existing designs.
SI8460/61/62/63 30 rev. 1.5 not recommended f o r n e w d e si g n s revision a devices 2 SI8460aa-a-is1 si8660ba-b-is1 6 0 1 1 kvrms nb soic-16 SI8460ba-a-is1 si8660ba-b-is1 6 0 150 si8461aa-a-is1 si8661ab-b-is1 5 1 1 si8461ba-a-is1 si8661bb-b-is1 5 1 150 si8462aa-a-is1 si8662ab-b-is1 4 2 1 si8462ba-a-is1 si8662bb-b-is1 4 2 150 si8463aa-a-is1 si8663ab-b-is1 3 3 1 si8463ba-a-is1 si8663bb-b-is1 3 3 150 SI8460ab-a-is1 si8660ab-b-is1 6 0 1 2.5 kvrms nb soic-16 SI8460bb-a-is1 si8660bb-b-is1 6 0 150 si8461ab-a-is1 si8661ab-b-is1 5 1 1 si8461bb-a-is1 si8661bb-b-is1 5 1 150 si8462ab-a-is1 si8662ab-b-is1 4 2 1 si8462bb-a-is1 si8662bb-b-is1 4 2 150 si8463ab-a-is1 si8663ab-b-is1 3 3 1 si8463bb-a-is1 si8663bb-b-is1 3 3 150 table 14. ordering guide for valid opns 1 ordering part number (opn) alternative part number (apn) number of inputs vdd1 side number of inputs vdd2 side maximum data rate (mbps) isolation rating package type notes: 1. all packages are rohs-compliant. moisture sensitivity level is msl2a with peak reflow temperature of 260 c according to the jedec industry standard classifica tions and peak solder temperature. 2. revision a and revision b devices are supported for existing designs.
SI8460/61/62/63 rev. 1.5 31 not recommended f o r n e w d e si g n s 6. package outline: 16 -pin narrow body soic figure 16 illustrates the package details for the si846x in a 16-pin narrow-body soic (so-16). table 15 lists the values for the di mensions shown in the illustration. figure 16. 16-pin small outline integrated circuit (soic) package table 15. package diagram dimensions dimension min max a ? 1.75 a1 0.10 0.25 a2 1.25 ? b 0.31 0.51 c 0.17 0.25 d 9.90 bsc e 6.00 bsc e1 3.90 bsc e 1.27 bsc l 0.40 1.27 l2 0.25 bsc
SI8460/61/62/63 32 rev. 1.5 not recommended f o r n e w d e si g n s h 0.25 0.50 0 8 aaa 0.10 bbb 0.20 ccc 0.10 ddd 0.25 notes: 1. all dimensions shown are in millimeters (mm) unless otherwise noted. 2. dimensioning and tolerancing per ansi y14.5m-1994. 3. this drawing conforms to the je dec solid state outline ms-012, variation ac. 4. recommended card reflow profile is per the jedec/ipc j-std-020 specification for small body components. table 15. package diagram dimensions (continued) dimension min max
SI8460/61/62/63 rev. 1.5 33 not recommended f o r n e w d e si g n s 7. land pattern: 16-pin narrow body soic figure 17 illustrates the recommended land pattern details for the si846x in a 16-pin narrow-body soic. table 16 lists the values for the dimens ions shown in the illustration. figure 17. 16-pin narrow body soic pcb land pattern table 16. 16-pin narrow body soic land pattern dimensions dimension feature (mm) c1 pad column spacing 5.40 e pad row pitch 1.27 x1 pad width 0.60 y1 pad length 1.55 notes: 1. this land pattern design is based on ipc-7351 pattern soic127p600x165-16n for density level b (median land protrusion). 2. all feature sizes shown are at maximum material condition (mmc) and a card fabrication tolerance of 0.05 mm is assumed.
SI8460/61/62/63 34 rev. 1.5 not recommended f o r n e w d e si g n s 8. top marking: 1 6-pin narrow body soic 8.1. 16-pin narrow body soic top marking 8.2. top marking explanation line 1 marking: base part number ordering options (see ordering guide for more information). si84 = isolator product series xy = channel configuration x = # of data channels (6, 5, 4, 3, 2, 1) y = # of reverse channels (3, 2, 1, 0) s = speed grade a = 1 mbps; b = 150 mbps v = insulation rating a = 1 kv; b = 2.5 kv line 2 marking: circle = 1.2 mm diameter ?e3? pb-free symbol yy = year ww = work week assigned by the assembly house. corresponds to the year and work week of the mold date. tttttt = mfg code manufacturing code from assembly purchase order form. circle = 1.2 mm diameter ?e3? pb-free symbol. si84xysv yywwtttttt e3
SI8460/61/62/63 rev. 1.5 35 not recommended f o r n e w d e si g n s d ocument c hange l ist revision 0.1 to revision 0.2 ? updated all specs to re flect latest silicon. ? added "3. errata and design migration guidelines" on page 27. ? added "8. top marking: 16 -pin narrow body soic" on page 34. revision 0.2 to revision 1.0 ? updated document to reflec t availability of revision b silicon. ? updated tables 3,4, and 5. ?? updated all supply currents and channel-channel skew. ? updated table 2. ?? updated absolute maximum supply voltage. ? updated table 7. ?? updated clearance and creepage dimensions. ? updated "3. errata and design migration guidelines" on page 27. ? updated "5. ordering guide" on page 29. revision 1.0 to revision 1.1 ? updated tables 3, 4, and 5. ?? updated notes in tables to reflect output impedance of 85 : . ?? updated rise and fall time specifications. ?? updated cmti value. revision 1.1 to revision 1.2 ? updated document throughout to include msl improvements to msl2a. ? updated "5. ordering guide" on page 29. ?? updated note 1 in ordering guide table to reflect improvement and compliance to msl2a moisture sensitivity level. revision 1.2 to revision 1.3 ? updated " features" on page 1. ? moved tables 1 and 2 to page 4. ? updated tables 6, 7, 8, and 9. ? updated table 12 footnotes. ? added figure 15, ?si84xx time-dependent dielectric breakdown,? on page 26. revision 1.3 to revision 1.4 ? updated "4. pin descriptions" on page 28. ?? removed note for narrow-body devices. ? updated "2.4.1. supply bypass" on page 23. ? added figure 6, ?recommended bypass components for the si84xx digital isolator family,? on page 23. ? updated "3.1. power supply bypass capacitors (revision a and revision b)" on page 27. revision 1.4 to revision 1.5 ? updated "5. ordering guide" on page 29 to include new title note and ? alternative part number (apn)? column.
SI8460/61/62/63 36 rev. 1.5 not recommended f o r n e w d e si g n s c ontact i nformation silicon laboratories inc. 400 west cesar chavez austin, tx 78701 tel: 1+(512) 416-8500 fax: 1+(512) 416-9669 toll free: 1+(877) 444-3032 please visit the silicon labs technical support web page: https://www.silabs.com/support/pages/contacttechnicalsupport.aspx and register to submit a technical support request. patent notice silicon labs invests in research and development to help our cust omers differentiate in the market with innovative low-power, s mall size, analog- intensive mixed-signal soluti ons. silicon labs' extensive patent portfolio is a testament to our unique approach and world-clas s engineering team. silicon laboratories and silicon labs are trademarks of silicon laboratories inc. other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders. the information in this document is believed to be accurate in all respects at the time of publ ication but is subject to change without notice. silicon laboratories assumes no responsibili ty for errors and omissions, and disclaim s responsibility for any consequences resu lting from the use of information included herein. additionally, silicon laboratories assumes no responsibility for the functioning of und escribed fea- tures or parameters. silicon laboratories reserves the right to make changes without further notice. silicon laboratories makes no warran- ty, representation or guarantee regarding t he suitability of its products for any par ticular purpose, nor does silicon laborato ries assume any liability arising out of the application or use of any product or circuit, and specif ically disclaims any and all liability, in cluding without limitation consequential or incidental damages . silicon laboratories products are not designed, intended, or authorized for use in applica tions intend- ed to support or sustain life, or for any other application in which the failure of the silicon laboratories product could crea te a situation where personal injury or death may occur. should buyer purchase or us e silicon laboratories products for any such unintended or unaut horized application, buyer shall indemnify and hold silicon laboratories harmle ss against all claims and damages.

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